CWDM3011P Datasheet - Central Semiconductor

P-Channel MOSFET

CWDM3011P Features

* Low rDS(ON)

* High current

* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

CWDM3011P General Description

The CENTRAL SEMICONDUCTOR CWDM3011P is a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge. SOIC-8 CASE MARKING CODE: C3011P APPLICATI.

CWDM3011P Datasheet (900.50 KB)