CWDM305P Datasheet - Central Semiconductor

P-Channel MOSFET

CWDM305P Features

* Low rDS(ON) (83mΩ MAX @ VGS=5.0V)

* High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resist

CWDM305P General Description

The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage c.

CWDM305P Datasheet (308.38 KB)