CWDM305P Datasheet - Central Semiconductor

CWDM305P P-Channel MOSFET

The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage c.

CWDM305P Features

* Low rDS(ON) (83mΩ MAX @ VGS=5.0V)

* High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resist

CWDM305P Datasheet (308.38 KB)