CXDM1002N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

CXDM1002N Description

CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver a.

CXDM1002N Features

* Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
* High voltage (VDS=100V)
* Logic level compatibility
* 2kV ESD protection MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Di

CXDM1002N Applications

* This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

📥 Download Datasheet

CXDM1002N Datasheet Preview — Preview of CXDM1002N PDF

Datasheet Details

Part number: CXDM1002N
Manufacturer: Central Semiconductor ↗
File Size: 359.55 KB
Datasheet: CXDM1002N-CentralSemiconductor.pdf
Description: SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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