CEM4936 Features
* 30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA =
CEM4936_Chino-ExcelTechnology.pdf
Datasheet Details
CEM4936, CEM4936_Chino
Chino-Excel Technology
60.79 KB
Dual n-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEM4936, CEM4936_Chino.
Please refer to the document for exact specifications by model.
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