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C3M0280090J - Silicon Carbide Power MOSFET

Cree

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Datasheet Details

Part number	C3M0280090J
Manufacturer	Cree
File Size	1.02 MB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0280090J-Cree.pdf

C3M0280090J Product details

Features

New C3M SiC MOSFET technology.
High blocking voltage with low On-resistance.
High speed switching with low capacitances.
New low impedance package with driver source.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant.
Wide creepage (~7mm) between drain and source Package TAB Drain Benefits.
Higher system efficiency.
Reduced cooling requirements.
Increased power density.

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Published: Nov 3, 2016 |