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CY62148G 4-Mbit (512K words x 8 bit) Static RAM

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Description

CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting C.
CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1].

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Datasheet Specifications

Part number
CY62148G
Manufacturer
Cypress Semiconductor
File Size
714.54 KB
Datasheet
CY62148G-CypressSemiconductor.pdf
Description
4-Mbit (512K words x 8 bit) Static RAM

Features

* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 μA
* Maximum standby current: 8.7 μA
* Embedded ECC for single-bit error correction[1]
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
* 1.0-V data retention
* TTL

CY62148G Distributors

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📌 All Tags

4-Mbit 512K words bit Static RAM Cypress Semiconductor
Cypress Semiconductor CY62148G-like datasheet