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CY62148G

4-Mbit (512K words x 8 bit) Static RAM

CY62148G Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 μA

* Maximum standby current: 8.7 μA

* Embedded ECC for single-bit error correction[1]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0-V data retention

* TTL

CY62148G General Description

CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1]. This device is offered multiple pin configurations. Device is accessed by asserting the chip enable (CE) input LOW. Data writes are performed by asserting the Write Enable (WE) input LOW, while providing the data.

CY62148G Datasheet (714.54 KB)

Preview of CY62148G PDF

Datasheet Details

Part number:

CY62148G

Manufacturer:

Cypress Semiconductor

File Size:

714.54 KB

Description:

4-mbit (512k words x 8 bit) static ram.
CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting C.

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TAGS

CY62148G 4-Mbit 512K words bit Static RAM Cypress Semiconductor

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