Description
CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co.
CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Features
* Ultra-low standby power
* Typical standby current: 5.5 A
* Maximum standby current: 16 A
* High speed: 45 ns/55 ns
* Embedded error-correcting code (ECC) for single-bit error correction
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
* 1.0 V data