CY62168GE

16-Mbit (2M words x 8 bits) Static RAM

Cypress Semiconductor

CY62168GE Features

* Ultra-low standby power

* Typical standby current: 5.5 A

* Maximum standby current: 16 A

* High speed: 45 ns/55 ns

* Embedded error-correcting code (ECC) for single-bit error correction

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0 V data

CY62168GE General Description

CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62168GE device includes an error indication pin that signals a single-bit error-detection and co.

CY62168GE Datasheet (751.81 KB)

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Datasheet Details

Part number:

CY62168GE

Manufacturer:

Cypress Semiconductor

File Size:

751.81 KB

Description:

16-mbit (2m words x 8 bits) static ram.
CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co.

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CY62168GE 16-Mbit words bits Static RAM Cypress Semiconductor

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CY62168GE Features

CY62168GE General Description

Datasheet Details

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