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CY7C2665KV18, CY7C2663KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture

Cypress Semiconductor

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CY7C2665KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C2665KV18, CY7C2663KV18. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	CY7C2665KV18, CY7C2663KV18
Manufacturer	Cypress Semiconductor
File Size	1.20 MB
Description	144-Mbit QDR II+ SRAM Four-Word Burst Architecture
Datasheet	CY7C2663KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C2665KV18, CY7C2663KV18. Please refer to the document for exact specifications by model.

CY7C2665KV18 Product details

Features

Separate independent read and write data ports.
Supports concurrent transactions.
550-MHz clock for high bandwidth.
Four-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz.
Available in 2.5-clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
Static random access memory (SRAM) uses rising edges only.
Echo clocks (CQ and CQ) simplif.

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Published: Mar 14, 2017 |