CYRS1049DV33 - 4-Mbit (512 K x 8) Static RAM
3 Selection Guide 3 Pin Configuration 3 Maximum Ratings 4 Operating Range 4 DC Electrical Characteristics 4 Capacitance 5 Thermal Resistance 5 AC Test Loads and Waveforms 5 AC Switching Characteristics 6 Data Retention Characteristics 7 Data Retention Waveform 7 Switching Waveforms 8 Tr
CYRS1049DV33 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions 1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 MeV.cm2/mg (125 C) Processing Flows
CYRS1049DV33 Features
* ❥ Temperature ranges ❥ Military/Space:
* 55 °C to 125 °C ❥ High speed ❥ tAA = 12 ns ❥ Low active power ❥ ICC = 95 mA at 12 ns (PMAX = 315 mW) ❥ Low CMOS standby power ❥ ISB2 = 15 mA ❥ 2.0 V data retention ❥ Automatic power-down when deselected ❥ Transistor-transistor logic (TTL) compatible in
