MTB080P06L3 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C069L3 Issued Date : 2016.03.14 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P0.

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Datasheet Specifications

Part number: MTB080P06L3
Manufacturer: Cystech Electonics
File Size: 422.91 KB
Datasheet: MTB080P06L3-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3-0-T3-G Package SOT-223 (

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB080P06L3 CYStek Product Specification

MTB080P06L3 Distributors

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MTB080P06L3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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