* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package S
MTB080P06N3 Datasheet (410.12 KB)
MTB080P06N3
Cystech Electonics
410.12 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
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