MTB080P06N3 Datasheet - Cystech Electonics

MTB080P06N3 P-Channel Enhancement Mode Power MOSFET

MTB080P06N3 Features

* Advanced trench process technology

* High density cell design for ultra low on resistance

* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package S

MTB080P06N3 Datasheet (410.12 KB)

MTB080P06N3 Datasheet Preview — Preview of MTB080P06N3 PDF

Datasheet Details

Part number:

MTB080P06N3

Manufacturer:

Cystech Electonics

File Size:

410.12 KB

Description:

P-channel enhancement mode power mosfet.

📁 Related Datasheet

MTB080P06N6 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB080P06J3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB080P06L3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB080P06M3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB080P06Q8 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB080C10Q8 N- and P-channel enhancement mode power MOSFET (Cystech Electonics)

MTB080N15J3 N-Channel Enhancement Mode Power MOSFET (CYStech)

MTB08N04J3 N-Channel Enhancement Mode Power MOSFET (CYStech)

TAGS

MTB080P06N3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

MTB080P06N3 Distributor