MTB080P06N3 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C069N3 Issued Date : 2016.03.24 Revised Date : Page No.: 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 .

📥 Download Datasheet

MTB080P06N3 Datasheet Preview — Preview of MTB080P06N3 PDF

Datasheet Specifications

Part number: MTB080P06N3
Manufacturer: Cystech Electonics
File Size: 410.12 KB
Datasheet: MTB080P06N3-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package S

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB080P06N3 CYStek Product Specification

MTB080P06N3 Distributors

📁 Related Datasheet

MTB080N15J3 MTB08N04J3 MTB001 MTB001D01-1 MTB010A03H8 MTB010A06RH8

📌 All Tags

MTB080P06N3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

Cystech Electonics MTB080P06N3-like datasheet