MTB080P06N6 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No.: 1/9 P-Channel Enhancement Mode Power MOSF.

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Datasheet Specifications

Part number: MTB080P06N6
Manufacturer: Cystech Electonics
File Size: 464.75 KB
Datasheet: MTB080P06N6-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Small package outline
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB080P06N6 CYStek Product Specification

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MTB080P06N6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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