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MTB080P06N6 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

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Datasheet Details

Part number	MTB080P06N6
Manufacturer	Cystech Electonics
File Size	464.75 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB080P06N6-CystechElectonics.pdf

MTB080P06N6 Product details

Features

Simple drive requirement.
Low on-resistance.
Small package outline.
Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C T.

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Published: Sep 4, 2016 |