* Simple drive requirement
* Low on-resistance
* Small package outline
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC
MTB080P06N6 Datasheet (464.75 KB)
MTB080P06N6
Cystech Electonics
464.75 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9
P-Channel Enhancement Mode Power MOSF.
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