MTB080P06N6 Datasheet - Cystech Electonics

MTB080P06N6 P-Channel Enhancement Mode Power MOSFET

MTB080P06N6 Features

* Simple drive requirement

* Low on-resistance

* Small package outline

* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC

MTB080P06N6 Datasheet (464.75 KB)

MTB080P06N6 Datasheet Preview — Preview of MTB080P06N6 PDF

Datasheet Details

Part number:

MTB080P06N6

Manufacturer:

Cystech Electonics

File Size:

464.75 KB

Description:

P-channel enhancement mode power mosfet.

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MTB080P06N6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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