MTB2D0N04E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB2D0N04E3
Manufacturer	Cystech Electonics
File Size	350.93 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB2D0N04E3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.5 mΩ(typ) Symbol MTB2D0N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB2D0N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton E.

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Published: Jun 24, 2016 |