MTB2D0N04E3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB2D0N04E3 Spec.No.: C072E3 Issued Date : 2015.12.25 Revised Date : 2016.03.04 P.

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Datasheet Specifications

Part number: MTB2D0N04E3
Manufacturer: Cystech Electonics
File Size: 350.93 KB
Datasheet: MTB2D0N04E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.5 mΩ(typ) Sy

MTB2D0N04E3 Distributors

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MTB2D0N04E3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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