* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.5 mΩ(typ) Sy
MTB2D0N04E3 Datasheet (350.93 KB)
MTB2D0N04E3
Cystech Electonics
350.93 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB2D0N04E3 Spec. No. : C072E3 Issued Date : 2015.12.25 Revised Date : 2016.03.04 P.
📁 Related Datasheet
MTB2D0N04F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D0N04H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D5N03BE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D5N03BH8 N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D5N03BJ3 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB2D5N03BQ8 N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
LSD3561-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3765-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3554-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3552-XX Multilayer Ferrite Chip Beads (MAGNETIC)
