* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol MTB2
MTB2D5N03BQ8 Datasheet (430.70 KB)
MTB2D5N03BQ8
Cystech Electonics
430.70 KB
N-channel logic level enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS.
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