MTB2D5N03BE3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB2D5N03BE3
Manufacturer	Cystech Electonics
File Size	347.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB2D5N03BE3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 111A(Si limit) 66A(PKG limit) 17.5A 3.5 mΩ(typ) 4.6 mΩ(typ) Symbol MTB2D5N03BE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB2D5N03BE3-0-UB-X Package TO-220 (RoHS compliant) Shippi.

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Published: Sep 4, 2016 |