* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 111A(Si limit) 66
MTB2D5N03BE3 Datasheet (347.66 KB)
MTB2D5N03BE3
Cystech Electonics
347.66 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB2D5N03BE3 Spec. No. : C998E3 Issued Date : 2016.08.01 Revised Date : Page No. : .
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