* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Dynamic dv/dt rating
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RD
MTB2D5N03BH8 Datasheet (407.23 KB)
MTB2D5N03BH8
Cystech Electonics
407.23 KB
N-channel logic level enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C998H8 Issued Date : 2015.03.05 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS.
📁 Related Datasheet
MTB2D5N03BE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D5N03BJ3 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB2D5N03BQ8 N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D0N04E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D0N04F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB2D0N04H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
LSD3561-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3765-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3554-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3552-XX Multilayer Ferrite Chip Beads (MAGNETIC)
TAGS
Image Gallery
