MTB2D5N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB2D5N03BH8
Manufacturer	Cystech Electonics
File Size	407.23 KB
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet	MTB2D5N03BH8-CystechElectonics.pdf

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Dynamic dv/dt rating.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=24A 30V 60A 20A 2.1 mΩ(typ) 2.9 mΩ(typ) Symbol MTB2D5N03BH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB2D5N03BH8-0-T6-G Package DFN 5 ×6 (Pb-.

📁 MTB2D5N03BH8 Similar Datasheet

MTB2D5N03BJ3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB201209B070 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B102 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B121 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B221 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B301 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B400 - Multilayer Ferrite Chip Beads (MAGNETIC)
MTB201209B601 - Multilayer Ferrite Chip Beads (MAGNETIC)

Other Datasheets by Cystech Electonics

Published: Jun 24, 2016 |