* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 152A(silicon limit) 84A(package limit) 23A 1.64mΩ(typ) 1.89m
MTB2D0N04H8 Datasheet (414.29 KB)
MTB2D0N04H8
Cystech Electonics
414.29 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C072H8 Issued Date : 2015.12.28 Revised Date : 2016.03.04 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO.
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