MTB2D0N04H8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C072H8 Issued Date : 2015.12.28 Revised Date : 2016.03.04 Page No.: 1/ 10 N-Channel Enhancement Mode Power MO.

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Datasheet Specifications

Part number: MTB2D0N04H8
Manufacturer: Cystech Electonics
File Size: 414.29 KB
Datasheet: MTB2D0N04H8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 152A(silicon limit) 84A(package limit) 23A 1.64mΩ(typ) 1.89m

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MTB2D0N04H8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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