MTB2D0N04F3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB2D0N04F3
Manufacturer	Cystech Electonics
File Size	369.36 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB2D0N04F3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.5 mΩ(typ) Symbol MTB2D0N04F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB2D0N04F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs.

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Published: Jun 24, 2016 |