* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A
* Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ
MTB60A06DH8 Datasheet (639.65 KB)
MTB60A06DH8
Cystech Electonics
639.65 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No. : 1/ 10 Dual N-Channel Enhancement Mode Pow.
📁 Related Datasheet
MTB60A06Q8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A03KQ8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB600N03N3 30V N-CHANNEL MOSFET (Cystech Electonics)
MTB60B06Q8 Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60N06HD TMOS POWER FET (Motorola)
MTB60N06HD Power MOSFET (ON Semiconductor)
MTB6D0N03AH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03ATH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03ATV8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03BH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
