MTB60A06DH8 Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No.: 1/ 10 Dual N-Channel Enhancement Mode Pow.

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Datasheet Specifications

Part number: MTB60A06DH8
Manufacturer: Cystech Electonics
File Size: 639.65 KB
Datasheet: MTB60A06DH8-CystechElectonics.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A
* Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ

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MTB60A06DH8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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