MTB60A06DH8 Datasheet - Cystech Electonics

MTB60A06DH8 Dual N-Channel Enhancement Mode Power MOSFET

MTB60A06DH8 Features

* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A

* Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A

* Low Gate Charge

* Fast Switching Characteristic

* Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ

Datasheet Details

MTB60A06DH8

Cystech Electonics

639.65 KB

Dual n-channel enhancement mode power mosfet.

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