Datasheet4U Logo Datasheet4U.com

MTB6N60E TMOS POWER FET

MTB6N60E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

MTB6N60E Features

* versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed t

MTB6N60E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

📥 Download Datasheet

Preview of MTB6N60E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTB6N60E
Manufacturer
Motorola
File Size
192.40 KB
Datasheet
MTB6N60E_Motorola.pdf
Description
TMOS POWER FET

📁 Related Datasheet

  • MTB600N03N3 - 30V N-CHANNEL MOSFET (Cystech Electonics)
  • MTB60A03KQ8 - Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB60A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB60B06Q8 - Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTB6D0N03AH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB6D0N03ATH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB6D0N03ATV8 - N-Channel Enhancement Mode Power MOSFET (CYStech)

📌 All Tags

TMOS POWER FET Motorola
Motorola MTB6N60E-like datasheet