MTB6N60E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

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Datasheet Specifications

Part number: MTB6N60E
Manufacturer: Motorola
File Size: 192.40 KB
Datasheet: MTB6N60E_Motorola.pdf
Description: TMOS POWER FET

Features

* versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed t

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

MTB6N60E Distributors

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MTB6N60E TMOS POWER FET Motorola

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