MTB60N06HD Datasheet - Motorola

MTB60N06HD - TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

MTB60N06HD Features

* ctively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit element

MTB60N06HD_Motorola.pdf

MTB60N06HD Datasheet Preview — Preview of MTB60N06HD PDF

Datasheet Details

Part number:

MTB60N06HD

Manufacturer:

Motorola

File Size:

280.76 KB

Description:

Tmos power fet.

📁 Related Datasheet

MTB600N03N3 MTB60A03KQ8 MTB60A06DH8 MTB60A06Q8 MTB60B06Q8 MTB6D0N03AH8

📌 All Tags

MTB60N06HD TMOS POWER FET Motorola