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MTB60N06HD TMOS POWER FET

MTB60N06HD Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.

MTB60N06HD Features

* ctively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit element

MTB60N06HD Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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Datasheet Details

Part number
MTB60N06HD
Manufacturer
Motorola
File Size
280.76 KB
Datasheet
MTB60N06HD_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB60N06HD-like datasheet