* ctively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit element
MTB60N06HD Datasheet (280.76 KB)
MTB60N06HD
Motorola
280.76 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.
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