MTB60N06HD TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.

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Datasheet Specifications

Part number: MTB60N06HD
Manufacturer: Motorola
File Size: 280.76 KB
Datasheet: MTB60N06HD_Motorola.pdf
Description: TMOS POWER FET

Features

* ctively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit element

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB60N06HD TMOS POWER FET Motorola

Motorola MTB60N06HD-like datasheet