* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Dynamic dv/dt rating
* Repetitive Avalanche Rated
* Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) VGS=10V, ID=12A VGS=4.5V, ID=8A 30V 12.5A 6.7mĪ© 9.
MTB6D0N03ATV8 Datasheet (313.60 KB)
MTB6D0N03ATV8
CYStech
313.60 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C709V8 Issued Date : 2013.10.23 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS.
š Related Datasheet
MTB6D0N03ATH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03AH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03BH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03BJ3 N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB600N03N3 30V N-CHANNEL MOSFET (Cystech Electonics)
MTB60A03KQ8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06DH8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06Q8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60B06Q8 Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60N06HD TMOS POWER FET (Motorola)
