Datasheet Specifications
- Part number
- MTB6N60E1
- Manufacturer
- Motorola
- File Size
- 160.57 KB
- Datasheet
- MTB6N60E1_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead.
Features
* es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 10000 TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1000 1600 Crss Ciss 100Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTB6N60E1 Distributors
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