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MTB6N60E1 TMOS POWER FET

MTB6N60E1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead.

MTB6N60E1 Features

* es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 10000 TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1000 1600 Crss Ciss 100

MTB6N60E1 Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTB6N60E1
Manufacturer
Motorola
File Size
160.57 KB
Datasheet
MTB6N60E1_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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