MTB9D0N10RQ8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB9D0N10RQ8 Spec.No.: C169Q8 Issued Date : 2016.11.04 Revised Date : Page No.: .

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Datasheet Specifications

Part number: MTB9D0N10RQ8
Manufacturer: Cystech Electonics
File Size: 428.38 KB
Datasheet: MTB9D0N10RQ8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5

MTB9D0N10RQ8 Distributors

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MTB9D0N10RQ8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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