MTE016N15E3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C434E3 Issued Date : 2016.05.16 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N1.

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Datasheet Specifications

Part number: MTE016N15E3
Manufacturer: Cystech Electonics
File Size: 343.65 KB
Datasheet: MTE016N15E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE016N15E3 CYStek Product Specification

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MTE016N15E3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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