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BTD1816J3 Low Vcesat NPN Epitaxial Planar Transistor

BTD1816J3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD1816J3 BVCEO IC Spec.No.: C821J3 Issued Date : 2005.03.29 Revised Date :2.

BTD1816J3 Features

* Low collector-to-emitter saturation voltage
* High-speed switching
* Large current capability
* Good linearity of hFE
* High fT

BTD1816J3 Applications

* Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol BTD1816J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD1816J3-X-T3-G Package TO-252 (Pb-free lead plating and halogen-free pac

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Datasheet Details

Part number
BTD1816J3
Manufacturer
Cystech Electonics
File Size
328.59 KB
Datasheet
BTD1816J3_CystechElectonics.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

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Low Vcesat NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD1816J3-like datasheet