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BTN6517A3 High Voltage NPN Epitaxial Planar Transistor

BTN6517A3 Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C231A3 Issued Date : 2003.04.12 Revised Date : Page No.: 1/4 High Voltage NPN Epitaxial P.

BTN6517A3 Features

* High Breakdown Voltage:BVCEO≥350V
* Complementary to BTP6520A3 Symbol BTN6517A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
* -continuous Power Dissi

BTN6517A3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN6517A3 CYStek Product Specification

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Datasheet Details

Part number
BTN6517A3
Manufacturer
Cystech Electonics
File Size
179.27 KB
Datasheet
BTN6517A3_CystechElectonics.pdf
Description
High Voltage NPN Epitaxial Planar Transistor

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High Voltage NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTN6517A3-like datasheet