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MTE050N10KRJ3 - N -Channel Enhancement Mode Power MOSFET

MTE050N10KRJ3 Description

CYStech Electronics Corp.N -Channel Enhancement Mode Power MOSFET MTE050N10KRJ3 Spec.No.: C019J3 Issued Date : 2018.04.02 Revised Date : Page No..

MTE050N10KRJ3 Features

* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.5mΩ(TYP) Equivalent Circuit MTE050N10KRJ3 Outline TO-252(DPAK) G DS G：Gate D：Drain S：Sour

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Datasheet Details

Part number
MTE050N10KRJ3
Manufacturer
Cystech Electonics
File Size
451.43 KB
Datasheet
MTE050N10KRJ3-CystechElectonics.pdf
Description
N -Channel Enhancement Mode Power MOSFET

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-Channel Enhancement Mode Power MOSFET Cystech Electonics
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