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MTEA0N10J3 N-Channel Enhancement Mode Power MOSFET

MTEA0N10J3 Description

CYStech Electronics Corp.Spec.No.: C871J3 Issued Date : 2013.01.03 Revised Date : Page No.: 1/10 N-Channel Enhancement Mode Power MOSFET MTEA0N1.

MTEA0N10J3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unle

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Datasheet Details

Part number
MTEA0N10J3
Manufacturer
Cystech Electonics
File Size
264.25 KB
Datasheet
MTEA0N10J3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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