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DMN3032LFDBWQ

Dual N-CHANNEL MOSFET

DMN3032LFDBWQ Features

* 100% Unclamped Inductive Switching

* Ensures More Reliable and Robust Application

* Low On-Resistance

* Minimizes Power Losses

* Low Gate Charge

* Minimizes Switching Losses

* Small Form Factor Low-Profile Package

* Increased Power Density

* Sidewall Pla

DMN3032LFDBWQ General Description

and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and ideal for use in:
* Body Control Electronics
* Power Management Functions
* DC-DC Converters
* Case: U-DFN2.

DMN3032LFDBWQ Datasheet (458.46 KB)

Preview of DMN3032LFDBWQ PDF

Datasheet Details

Part number:

DMN3032LFDBWQ

Manufacturer:

DIODES ↗

File Size:

458.46 KB

Description:

Dual n-channel mosfet.
DMN3032LFDBWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID Max TA = +25°C 5..

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DMN3032LFDBWQ Dual N-CHANNEL MOSFET DIODES

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