DMN3350LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMN3350LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID Max TA = +25°C 0.89A.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMN3350LDW
Manufacturer: DIODES ↗
File Size: 686.49 KB
Datasheet: DMN3350LDW-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

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DMN3350LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMN3350LDW-like datasheet