DMN61D9UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

NEW PRODUCT DMN61D9UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V 3.5Ω @ VGS .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: DMN61D9UDWQ
Manufacturer: DIODES ↗
File Size: 724.44 KB
Datasheet: DMN61D9UDWQ-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Ha

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Motor Control

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DMN61D9UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

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