DMP1008UCB9 P-CHANNEL MOSFET

DIODES

Description

DMP1008UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS -8V RDS(ON) Max 5.7mΩ@VGS = -4.5V ID Max TA = +25°C -13.2A .
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power.

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Datasheet Specifications

Part number: DMP1008UCB9
Manufacturer: DIODES ↗
File Size: 460.18 KB
Datasheet: DMP1008UCB9-DIODES.pdf
Description: P-CHANNEL MOSFET

Features

* LD-MOS Technology with the Lowest Figure of Merit:
* RDS(ON) = 5.7mΩ to Minimize On-State Losses
* Qg = 8.2nC for Ultra-Fast Switching
* VGS(TH) = -0.6V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm  1.5mm
* Height = 0.60mm for Low Profile
* ESD Protectio

Applications

* requiring specific change control (i. e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www. diodes. com/quality/product-definitions/ Applications
* DC-DC Converters
* Batte

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DMP1008UCB9 P-CHANNEL MOSFET DIODES

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