DMP1008UCB9 - P-CHANNEL MOSFET
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.
It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Fea
DMP1008UCB9 Features
* LD-MOS Technology with the Lowest Figure of Merit:
* RDS(ON) = 5.7mΩ to Minimize On-State Losses
* Qg = 8.2nC for Ultra-Fast Switching
* VGS(TH) = -0.6V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm 1.5mm
* Height = 0.60mm for Low Profile
* ESD Protectio
