DMP1012UCB9 Datasheet (Diodes)

DMP1012UCB9, P-Channel MOSFET

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Fea

DMP1012UCB9 Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching

* Vgs(th) = -0.8V typ. for a Low Turn-On Potential

* CSP with Footprint 1.5mm × 1.5mm

* Height = 0.62mm for Low Profile

* ESD =