DMP1012UCB9
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P-channel mosfet. This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high
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(DIODES)
Product Summary
BVDSS -12V
RDS(ON) Max
15m @ VGS = -4.5V 20mΩ @ VGS = -3.7V 30mΩ @ VGS = -2.5V 40mΩ @ VGS = -1.8V
ID Max TC = +25°C
-20A -18A -16A.
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ADVANCE INFORMATION
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Product Summary
Features and Benefits
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RDS(ON) Max
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ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT
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RDS(O.
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(Diodes)
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN
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Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
BVD.
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(Diodes)
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN
Product Summary
VDSS -12V
RDS(on) 12mΩ
Qg 4.9nC
Qgd 1.1nC
ID -7.6A
Typ. @ VGS = -4.5V, TA = +2.
DMP1005UFDF - P-CHANNEL ENHANCEMENT MODE MOSFET
(DIODES)
ADVANCE INFORMATION
DMP1005UFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -12V
RDS(ON) Max
8.5mΩ @ VGS = -4.5V 12mΩ @ VGS = -2.5V
I.
DMP1007UCB9 - P-CHANNEL MOSFET
(DIODES)
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Product Summary
VDSS -8V
RDS(ON) Max 5.7mΩ@VGS = -4.5V
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Description
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DMP1008UCA9 - P-CHANNEL MOSFET
(DIODES)
DMP1008UCA9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
VDSS -8V
RDS(ON) Max 5.7mΩ@VGS = -4.5V
ID Max TA = +25°C
-16A
Description.
DMP1008UCB9 - P-CHANNEL MOSFET
(DIODES)
DMP1008UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS -8V
RDS(ON) Max 5.7mΩ@VGS = -4.5V
ID Max TA = +25°C
-13.2A
Description
This 3r.