* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching
* Vgs(th) = -0.8V typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o
DMP1018UCB9 Datasheet (322.93 KB)
DMP1018UCB9
322.93 KB
P-channel mosfet.
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN
Product Summary
VDSS -12V
RDS(on) 12mΩ
Qg 4.9nC
Qgd 1.1nC
ID -7.6A
Typ. @ VGS = -4.5V, TA = +2.
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