DMP1018UCB9 P-Channel MOSFET

Diodes

Description

AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.9nC Qgd 1.1nC ID -7.6A Typ.@ VGS = -4.5V, TA = +2.
This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power.

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Datasheet Specifications

Part number: DMP1018UCB9
Manufacturer: DIODES ↗
File Size: 322.93 KB
Datasheet: DMP1018UCB9-Diodes.pdf
Description: P-Channel MOSFET

Features

* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching
* Vgs(th) = -0.8V typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o

Applications

* DC-DC Converters
* Battery Management

DMP1018UCB9 Distributors

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DMP1018UCB9 P-Channel MOSFET Diodes

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