DMP1018UCB9 Datasheet - Diodes

DMP1018UCB9 P-Channel MOSFET

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Appli.

DMP1018UCB9 Features

* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching

* Vgs(th) = -0.8V typ. for a Low Turn-On Potential

* CSP with Footprint 1.5mm × 1.5mm

* Height = 0.62mm for Low Profile

* ESD = 3kV HBM Protection o

DMP1018UCB9-Diodes.pdf