DMP1011UCB9 P-Channel MOSFET

Diodes

Description

AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.@ VGS = -4.5V, TA = +25°C) BVD.
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power.

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Datasheet Specifications

Part number: DMP1011UCB9
Manufacturer: DIODES ↗
File Size: 488.66 KB
Datasheet: DMP1011UCB9-Diodes.pdf
Description: P-Channel MOSFET

Features

* LD-MOS Technology with the Lowest Figure of Merit: -RDS(ON) = 8.2mΩ to Minimize On-State Losses -Qg = 8.1nC for Ultra-Fast Switching
* VGS(th) = -0.8V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.60mm for Low Profile
* ESD = 6kV HBM Protectio

Applications

* DC-DC Converters
* Battery Management
* Load Switch Mechanical Data
* Case: U-WLB1515-9
* Terminal Connections: See Diagram Below U-WLB1515-9 (Type B) Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMP1011U

DMP1011UCB9 Distributors

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DMP1011UCB9 P-Channel MOSFET Diodes

Diodes DMP1011UCB9-like datasheet