Datasheet Details
- Part number
- DMP1011UCB9
- Manufacturer
- DIODES ↗
- File Size
- 488.66 KB
- Datasheet
- DMP1011UCB9-Diodes.pdf
- Description
- P-Channel MOSFET
DMP1011UCB9 Description
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIIUOCONTN DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.@ VGS = -4.5V, TA = +25°C) BVD.
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power.
DMP1011UCB9 Features
* LD-MOS Technology with the Lowest Figure of Merit: -RDS(ON) = 8.2mΩ to Minimize On-State Losses -Qg = 8.1nC for Ultra-Fast Switching
* VGS(th) = -0.8V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.60mm for Low Profile
* ESD = 6kV HBM Protectio
DMP1011UCB9 Applications
* DC-DC Converters
* Battery Management
* Load Switch
Mechanical Data
* Case: U-WLB1515-9
* Terminal Connections: See Diagram Below
U-WLB1515-9 (Type B)
Top View Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP1011U
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