DMP1011UCB9 Datasheet - Diodes

DMP1011UCB9 P-Channel MOSFET

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Fea.

DMP1011UCB9 Features

* LD-MOS Technology with the Lowest Figure of Merit: -RDS(ON) = 8.2mΩ to Minimize On-State Losses -Qg = 8.1nC for Ultra-Fast Switching

* VGS(th) = -0.8V Typ. for a Low Turn-On Potential

* CSP with Footprint 1.5mm × 1.5mm

* Height = 0.60mm for Low Profile

* ESD = 6kV HBM Protectio

DMP1011UCB9-Diodes.pdf