DMT12H007SPS 120V N-CHANNEL MOSFET

DIODES

Description

DMT12H007SPS 120V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 120V RDS(ON) Max 8.9mΩ @ VGS = 10V 16mΩ @ VGS = 6V ID TC =.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMT12H007SPS
Manufacturer: DIODES ↗
File Size: 580.98 KB
Datasheet: DMT12H007SPS-DIODES.pdf
Description: 120V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Switching

DMT12H007SPS Distributors

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DMT12H007SPS 120V N-CHANNEL MOSFET DIODES

DIODES DMT12H007SPS-like datasheet