DMT12H090LFDF4 115V N-CHANNEL MOSFET

DIODES

Description

Product Summary BVDSS 115V BVDSS @TJmax 120V RDS(ON) Max 90mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID Max TA = +25°C 3.4A 2.3A DMT12H090LFDF4 115V N-CH.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal.

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Datasheet Specifications

Part number: DMT12H090LFDF4
Manufacturer: DIODES ↗
File Size: 501.49 KB
Datasheet: DMT12H090LFDF4-DIODES.pdf
Description: 115V N-CHANNEL MOSFET

Features

* 0.4mm Profile

Applications

* PCB Footprint of 4mm2
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive applicati

DMT12H090LFDF4 Distributors

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DMT12H090LFDF4 115V N-CHANNEL MOSFET DIODES

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