DMT12H090LFDF4

115V N-CHANNEL MOSFET

DIODES

DMT12H090LFDF4 Features

* 0.4mm Profile

* Ideal for Low Profile Applications

* PCB Footprint of 4mm2

* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable and Robust End Application

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimo

DMT12H090LFDF4 General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications
* DC-DC Primary Switch
* Load Switch Mechanical Data
* Case: X2-DFN2020-.

DMT12H090LFDF4 Datasheet (501.49 KB)

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Datasheet Details

Part number:

DMT12H090LFDF4

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DIODES ↗

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501.49 KB

Description:

115v n-channel mosfet.
Product Summary BVDSS 115V BVDSS @TJmax 120V RDS(ON) Max 90mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID Max TA = +25°C 3.4A 2.3A DMT12H090LFDF4 115V N-CH.

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DMT12H090LFDF4 115V N-CHANNEL MOSFET DIODES

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DMT12H090LFDF4 Features

DMT12H090LFDF4 General Description

Datasheet Details

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