DIM600M1HS17-PA500 - Half Bridge IGBT
DIM600M1HS17-PA500 Features
* Trench Gate IGBT
* High Thermal Cycling
* Cu Base with Enhanced Al2O3 Substrates
* 10µs Short Circuit Withstand KEY PARAMETERS VCES VCE(sat)
* (typ) IC (max) IC(RM) (max) 1700V 1.80V 600A 1200A
* Measured at the auxiliary terminals APPLICATIONS
