DIM600DDM17-A000 Datasheet - Dynex Semiconductor

Dual Switch IGBT Module

* 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)

* (typ) IC (max) IC(PK) (max)

* 1700V 2.7V 600A 1200A High Thermal Cycling Capability (measured at the power busbars an

DIM600DDM17-A000

Dynex Semiconductor

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Dual switch igbt module.

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DIM600DDM17-A000 Dual Switch IGBT Module Dynex Semiconductor

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