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DMBT5551 PNP Transistor

DMBT5551 Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R DMBT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descri.
Designed for general purpose applications requiring high breakdown voltage.

DMBT5551 Applications

* requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current T

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Datasheet Details

Part number
DMBT5551
Manufacturer
Dc Components
File Size
251.81 KB
Datasheet
DMBT5551_DcComponents.pdf
Description
PNP Transistor

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PNP Transistor Dc Components
Dc Components DMBT5551-like datasheet