DMG4800LK3 Datasheet, Mosfet, Diodes

DMG4800LK3 Features

• Mosfet
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1

PDF File Details

Part number:

DMG4800LK3

Manufacturer:

DIODES ↗

File Size:

148.21kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

DMG4800LK3

Diodes

📁 Related Datasheet

DMG4800LK3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance :.

DMG4800LFG - N-Channel MOSFET (Diodes)
NEW PRODUCT Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Complia.

DMG4800LSD - Dual N-Channel MOSFET (Diodes)
Product Summary V(BR)DSS 30V RDS(on) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TA = +25°C 9.8A 8.4A Description This MOSFET has been designed .

DMG4812SSS - N-Channel MOSFET (Diodes)
DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA.

DMG4822SSD - Dual N-Channel MOSFET (Diodes)
NEW PRODUCT NEW PRODUCT DMG4822SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 20mΩ @ VGS = 10V ID max TA = +25°.

DMG4822SSDQ - DUAL N-CHANNEL MOSFET (Diodes)
NOT RECOMMENDED FOR NEW DESIGN USE DMT3020LSDQ DMG4822SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 21mΩ @ VG.

DMG4406LSS - N-Channel MOSFET (Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 11mΩ @ VGS = 10V 15mΩ @ VGS = .

DMG4407SSS - P-Channel MOSFET (Diodes)
NEW PRODUCT DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) max 11mΩ @ VGS = -20V 17mΩ @ VGS = -6V ID max TA =.

DMG4413LSS - 30V P-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) max 7.5mΩ @ VGS = -10V 10.2mΩ @ VGS = -4.5V ID max TA = +25°C .

DMG4435SSS - P-Channel MOSFET (Diodes)
NEW PRODUCT Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Complia.