DMG4N60SK3 Datasheet, Mosfet, Diodes

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Part number:

DMG4N60SK3

Manufacturer:

DIODES ↗

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810.75kb

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📄 Datasheet

Description:

N-channel mosfet. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak

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DMG4N60SK3

Diodes

📁 Related Datasheet

DMG4N60SK3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance.

DMG4N60SCT - N-Channel MOSFET (Diodes)
OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V .

DMG4N60SJ3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :.

DMG4N60SJ3 - N-Channel MOSFET (Diodes)
NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A D.

DMG4N65CT - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.

DMG4N65CT - N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
ADVANCE INFORMATIO DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 650V RDS(ON) 3.0Ω@VGS = 10V Package TO220-3 ID TC = 25°C.

DMG4N65CTI - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.

DMG4N65CTI - N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
ADVANCE INFORMATIO DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) 650V 3.0Ω@VGS = 10V Package ITO220-3 ID TC = .

DMG4406LSS - N-Channel MOSFET (Diodes)
ADVANCE INNEFWORPRMOADTIUOCNT DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 11mΩ @ VGS = 10V 15mΩ @ VGS = .