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DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 10mΩ @ VGS = 10V 15mΩ @ VGS = 4..
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number
DMG7702SFG
Manufacturer
DIODES ↗
File Size
153.17 KB
Datasheet
DMG7702SFG-Diodes.pdf
Description
30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
* Low RDS(ON)
* minimize conduction losses
* Low VSD
* reducing the losses due to body diode conduction
* Low Qrr
* lower Qrr of the

Applications

* Applications
* Backlighting
* Power Management Functions

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