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DMN10H220L N-CHANNEL MOSFET

DMN10H220L Description

DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 1.6A 1.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

DMN10H220L Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* An automotive-compliant part is available under separate datasheet

DMN10H220L Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Mechanical Data
* Package: SOT23
* Package Material: Molded Plastic, “Green” Molding Compound.

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