DMN10H220LE N-CHANNEL MOSFET

Diodes

Description

DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.3A .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMN10H220LE
Manufacturer: DIODES ↗
File Size: 506.20 KB
Datasheet: DMN10H220LE-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* An Auto

Applications

* Applications
* DC-DC Converters

DMN10H220LE Distributors

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DMN10H220LE N-CHANNEL MOSFET Diodes

Diodes DMN10H220LE-like datasheet