* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
DMN10H099SFG Datasheet (248.79 KB)
DMN10H099SFG
248.79 KB
N-channel mosfet.
ADVANCE INFORMATION
DMN10H099SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 100V
RDS(ON) max 80mΩ @ VGS = 10V 99mΩ @.
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