DMN2016LFG Dual N-Channel MOSFET

Diodes

Description

ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMN2016LFG
Manufacturer: DIODES ↗
File Size: 164.95 KB
Datasheet: DMN2016LFG-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
* "Green" Device (Note 2)
* Qualified to AEC-Q101 Standards

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Power management functions
* Battery Pack
* Load Switch Mechanical

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DMN2016LFG Dual N-Channel MOSFET Diodes

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