* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
* "Green" Device (Note 2)
* Qualified to AEC-Q101 Standards
DMN2016LFG Datasheet (164.95 KB)
DMN2016LFG
164.95 KB
Dual n-channel mosfet.
ADVANCE INFORMATION
DMN2016LFG
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V.
📁 Related Datasheet
DMN2016LHAB - Dual N-Channel MOSFET
(Diodes)
NAEDWVPARNOCDEUICNTF O R M A T I O N
DMN2016LHAB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on)max
15.5mΩ @ VGS = 4.5.
DMN2016UTS - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
(Diodes)
DMN2016UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Out.
DMN2010UDZ - DUAL N-CHANNEL MOSFET
(Diodes)
A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N
DMN2010UDZ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS 24V
RD.
DMN2011UFDE - N-Channel MOSFET
(Diodes)
ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID max TA = +25°C
11.7A
10.8A.
DMN2011UFDF - 20V N-CHANNEL MOSFET
(Diodes)
ADVANCE INFORMATION
Product Summary
BVDSS 20V
RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID MAX TA = +25°C
11.7A
10.8A
Description
This new.
DMN2011UFX - Dual N-Channel MOSFET
(Diodes)
ADVANCED INFORMATION
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V
ID max TA = +25°C
12.2 A 10.4 A
DMN2011UFX
DUA.
DMN2011UTS - N-CHANNEL MOSFET
(DIODES)
DMN2011UTS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max
11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V
ID Max TC = +25°C
21A 20A
.
DMN2013UFDE - 20V N-CHANNEL ENHANCEMENT MODE MOSFET
(Diodes)
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ.
