DMN2016LHAB Dual N-Channel MOSFET

Diodes

Description

NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5.
Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching perfor.

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Datasheet Specifications

Part number: DMN2016LHAB
Manufacturer: DIODES ↗
File Size: 292.99 KB
Datasheet: DMN2016LHAB-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* Applications
* Case: U-DFN2030-6
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020
* Terminals: Finish
* NiPdAu over Copper leadframe. Solderable per MIL-STD-2

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DMN2016LHAB Dual N-Channel MOSFET Diodes

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