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DMN3900UFA N-Channel MOSFET

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Description

Product Summary V(BR)DSS 30V RDS(on) 760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V ID TA = +25°C 0.65A 0.58A 0.45A .
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.

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Applications

* Applications
* Load switch
* Portable applications

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